MoOx interlayer to enhance performance of pentacene-TFTs with low-cost copper electrodes

Synthetic Metals

Volumn 160, Issue 5-6, 2010, Pages 376-379

  Li, Jun ^a,b   Zhang, Xiao Wen ^a,b   Zhang, Liang ^a,b   Zhang, Hao ^b   Jiang, Xue Yin ^a   Khizar ul Haq, ^a   Zhu, Wen Qing ^a,b   Zhang, Zhi Lin ^a,b  

^a SHANGHAI UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Cu; MoOx; Organic thin film transistor; Pentacene

Indexed keywords

COPPER ELECTRODES; CU ELECTRODE; DEVICE PERFORMANCE; ELECTRICAL PROPERTY; FABRICATION COST; HOLE INJECTION; ON/OFF RATIO; ORGANIC THIN FILM TRANSISTORS; PENTACENES; SATURATION MOBILITY;

COST REDUCTION; ELECTRIC PROPERTIES; ELECTRODES; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

COPPER;

EID: 77249176524     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.11.008     Document Type: Article

References (21)

1. Mizukami M., Hirohata N., Iseki T., Ohtawara K., Tada T., Yagyu S., Abe T., Suzuki T., Fujisaki Y., Inoue Y., Tokito S., and Kurita T. IEEE Electron Device Lett. 27 (2006) 249
2. Huitema H.E.A., Gelinck G.H., van der Putten J.B.P.H., Kuijk K.E., Hart C.M., Cantatore E., Herweg P.T., van Breemen A.J.J.M., and de Leeuw D.M. Nature 414 (2001) 599
3. Wei B., Wang J., Li C., Shimada A., Ichikawa M., Taniguchci Y., and Kamikawa T. Org. Electron 9 (2008) 323
4. Oyamada T., Sasabe H., Adachi C., Okuyama S., Shimoji N., and Matsushige K. Appl. Phys. Lett. 86 (2005) 86
5. Huitema H.E.A., Gelinck G.H., van der Putten J.B.P.H., Kuijk K.E., Hart C.M., Cantatore E., and de Leeuw D.M. Adv. Mater. 14 (2002) 1201
6. Seo H.S., Jang Y.S., Zhang Y., Abthagir P.S., and Choi J.H. Org. Electron 9 (2008) 432
7. Lee S.H., Choo D.J., Han S.H., Kim J.H., Son Y.R., and Jang J. Appl. Phys. Lett. 90 (2007) 033502
8. Kumaki D., Umeda T., and Tokito S. Appl. Phys. Lett. 92 (2008) 013301
9. kano M., Minari T., and Tsukagoshi K. Appl. Phys. Lett. 94 (2009) 143304
10. Schroeder R., Majewski L.A., and Grell M. Appl. Phys. Lett. 84 (2004) 1005
11. Li J., Zhang X.W., Zhang L., Haq K., Jiang X.Y., Zhu W.Q., and Zhang Z.L. Semicond. Sci, Technol. 24 (2009) 115012
12. Vanoni C., Tsujino S., and Jung T.A. Appl. Phys. Lett. 90 (2007) 193119
13. Park S.Y., Noh Y.H., and Lee H.H. Appl. Phys. Lett. 88 (2006) 113503
14. Chen F.C., Kung L.J., Chen T.H., and Lin Y.S. Appl. Phys. Lett. 90 (2007) 073504
15. Kitamura M., Kuzumoto Y., Aomori S., Kamura M., Na J.H., and Arakawa Y. Appl. Phys. Lett. 94 (2009) 083310
16. Di C., Yu G., Liu Y., Guo Y., Wu W., Wei D., and Zhu D. Phys. Chem. Chem. Phys. 10 (2008) 2302
17. Di C., Liu Y., Yu G., and Zhu D. Acc. Chem. Res. (2009) 10.1021/ar9000873
18. Kanicki J., Griffith F.R., Griffith J., and Ploastre R. J. Appl. Phys. 69 (1991) 2339
19. Chu C.W., Li S.H., Chen C.W., Shrotriya V., and Yang Y. Appl. Phys. Lett. 87 (2005) 193508
20. Luan S., and Neudeck G.W. J. Appl. Phys. 72 (1992) 766
21. Wang S.D., Minari T., Miyadera T., Tsukagoshi K., and Aoyagi Y. Appl. Phys. Lett. 91 (2007) 203508