Role of negatively charged defects in the lattice contraction of Al-Si-N

Applied Physics Letters

Volumn 96, Issue 7, 2010, Pages

  Pignedoli, C A ^a   Passerone, D ^a   Hug, H J ^a   Plisson Schecker A ^a   Patscheider, J ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO SIMULATIONS; ALN; CELL PARAMETER; CHARGED DEFECTS; COULOMB REPULSIONS; EXPERIMENTAL EVIDENCE; LATTICE CONTRACTION; LATTICE EXPANSION; LATTICE PARAMETERS; N-COMPOUNDS; SI CONTENT; SILICON CONTENTS; WURTZITE STRUCTURE; WURTZITES;

ALUMINUM; DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ZINC SULFIDE;

SILICON;

EID: 77249150035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3323093     Document Type: Article

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