Charged oxygen defects in sio2: Going beyond local and semilocal approximations to density functional theory

Physical Review Letters

Volumn 104, Issue 7, 2010, Pages

  Martin Samos, L ^a,b   Roma, G ^c   Rinke, P ^d   Limoge, Y ^c  

^a DEMOCRITOS NATIONAL SIMULATION CENTER   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c SERVICE DE RECHERCHES DE MÉTALLURGIE PHYSIQUE   (France)

^d University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; DEFECT ENERGETICS; FIRST-PRINCIPLES; KINETIC BEHAVIOR; OXYGEN DEFECT; QUASI-PARTICLE ENERGY CALCULATIONS; SELF-DIFFUSION; SILICON DIOXIDE; STANDING PROBLEMS;

AMORPHOUS SILICON; DEFECTS; OXYGEN; PROBABILITY DENSITY FUNCTION; SILICA;

DENSITY FUNCTIONAL THEORY;

EID: 77249088714     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.104.075502     Document Type: Article

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