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Journal of Applied Physics

Volumn 107, Issue 3, 2010, Pages

Atomic structure of a Ni diffused Si(001) surface layer: Precursor to formation of NiSi2 at low temperature

(1) Ikarashi, Nobuyuki a

a NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STRUCTURE; INTERSTITIAL VOIDS; LATTICE SITES; LATTICE-MATCHED; LOW SUBSTRATE TEMPERATURE; LOW TEMPERATURES; NI ATOMS; SI ATOMS; SI CRYSTALS; SI(001) SURFACES; SUBSTRATE TEMPERATURE; SURFACE LAYERS;

ATOMS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL ATOMIC STRUCTURE;

EID: 76949106853 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3294691 Document Type: Article

Times cited : (13)

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