Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 1597-1599

  Kunder, D ^a   Baer, E ^a   Sekowski, M ^b   Pichler, P ^a,b   Rommel, M ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

FIB; Monte Carlo; Simulation; Sputter etching

Indexed keywords

3-D TOPOGRAPHY; APRIORI; FOCUSED ION BEAM ETCHING; ION IRRADIATION; MONTE CARLO; MONTE CARLO SIMULATION; PHYSICAL SPUTTERING PROCESS; PROCESS PARAMETERS; REALISTIC SIMULATION; SIDE WALLS; SPUTTER ETCHING; SPUTTERING PROCESS; SPUTTERING YIELDS;

ETCHING; EXPERIMENTS; ION BOMBARDMENT; ION IMPLANTATION; SIMULATORS; SPUTTERING;

FOCUSED ION BEAMS;

EID: 76949090809     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.007     Document Type: Article

References (7)

1. M. Nagao, Low temperature fabrication of poly-Si FEA for display application, in: Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE CNF), 2004, pp. 134-135.
2. ANETCH, Etching Simulator, Version 0.75, Fraunhofer IISB, Erlangen, 2009.
3. Ullrich M. Nucl. Instrum. Methods B 228 (2005) 373-377
4. M. Ullrich, Monte-Carlo Simulation of Backscattering and Sputtering, Diploma Thesis (in German), Chair of Electron Devices, University of Erlangen-Nuremberg, 2003.
5. Biersack J.P. Appl. Phys. A 34 (1984) 73-94
6. Oen O. Nucl. Instrum. Methods 132 (1976) 647-653
7. Ziegler J.F. The Stopping and Range of Ions in Solids. first ed. (1985), Pergamon Press