Study on the doping stability and electronic structure of wurtzite Zn1-xCdxO alloys by first-principle calculations

Journal of Physics and Chemistry of Solids

Volumn 71, Issue 3, 2010, Pages 336-339

  Tang, Xin ^a,b,c   Lu, Hai Feng ^d   Zhao, Ji Jun ^c   Zhang, Qing Yu ^c  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b GUILIN UNIVERSITY OF TECHNOLOGY   (China)

^c DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^d INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

A. Semiconductors; C. ab initio calculations; D. Electronic structure

Indexed keywords

A. SEMICONDUCTORS; AB INITIO CALCULATIONS; ALLOY CONFIGURATIONS; BAND GAPS; BAND-GAP VALUES; DOPING STABILITY; FIRST PRINCIPLE CALCULATIONS; FORMATION ENTHALPY; SECOND-ORDER POLYNOMIAL; WURTZITES;

ALLOYS; CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; TENSILE STRAIN; ZINC; ZINC SULFIDE;

CADMIUM ALLOYS;

EID: 76749117728     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2009.12.086     Document Type: Article

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