Investigation of low-temperature excitonic and defect emission from Ni-doped ZnO nanoneedles and V-doped ZnO nanostructured film

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Singh, Shubra ^a   Nakamura, Daisuke ^b   Sakai, Kentaro ^c   Okada, Tatsuo ^b   Ramachandra Rao, M S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b KYUSHU UNIVERSITY   (Japan)

^c UNIVERSITY OF MIYAZAKI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; AS-GROWN FILMS; DEFECT EMISSION; EFFECT OF DOPING; ELECTRON-HOLE EXCHANGE INTERACTION; EMISSION BANDS; EXCITON-POLARITON; EXCITONIC TRANSITION; FINE STRUCTURES; LONGITUDINAL OPTICAL PHONONS; LONGITUDINAL-TRANSVERSE SPLITTING; LOW TEMPERATURE PHOTOLUMINESCENCE; LOW TEMPERATURES; NANOSTRUCTURED FILMS; NANOSTRUCTURED THIN FILM; NI-DOPED; PHONON REPLICA; PULSED-LASER DEPOSITION TECHNIQUE; RELATIVE INTENSITY CHANGES; V-DOPED ZNO; VISIBLE RANGE; VISIBLE REGION; WELL-ALIGNED; ZNO;

DEPOSITION; DOPING (ADDITIVES); FILM GROWTH; METALLIC FILMS; NANONEEDLES; PHONONS; PULSED LASER DEPOSITION; PULSED LASERS; THIN FILMS;

ZINC OXIDE;

EID: 76749085728     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/2/023007     Document Type: Article

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