Growth and characterization of ZnO, SnO2 and ZnO/SnO2 nanostructures from the vapor phase

Topics in Catalysis

Volumn 47, Issue 1-2, 2008, Pages 84-96

  Fouad, O A ^a   Glaspell, G ^b   El Shall, M S ^b  

^a CENTRAL METALLURGICAL RESEARCH AND DEVELOPMENT INSTITUTE CMRDI   (Egypt)

^b VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

Nanobelts; Nanorods; Nanowires; SnO2; Tetrapods; Vapor phase growth; Zn2SnO4; ZnO; ZnSnO3

Indexed keywords

SNO2; TETRAPODS; VAPOR PHASE GROWTH; ZNO; ZNSNO3;

CHARACTERIZATION; GROWTH (MATERIALS); NANOBELTS; NANOPARTICLES; NANORODS; NANOWIRES; OXIDE MINERALS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; TIN; TIN DIOXIDE; VAPOR PHASE EPITAXY; VAPORS; ZINC; ZINC OXIDE; ZINC SULFIDE;

CRYSTAL STRUCTURE;

EID: 76549136800     PISSN: 10225528     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11244-007-9033-4     Document Type: Article

References (37)

1. Liz-Marzan LM, Kamat PV (2003) Nanoscale materials. Kluwer Academic Publishers, Boston
2. Edelstein AS, Cammarata RC (1996) Nanomaterials: synthesis, properties and applications. Institute of Physics, Bristol
3. Chow GM, Gonsalves KE (1996) Nanotechnology: molecularly designed materials. ACS Symposium Series 622, Washington
4. Hadijipanyis GC, Siegel RW (1994) Nanophase materials: synthesis, properties, applications. Kluwer Academic Publications, London
5. Wang ZL (2003) Nanowires and nanobelts - materials, properties and devices; vol I: metal and semiconductor nanowires. Kluwer Academic Publisher
6. Wang ZL (2003) Nanowires and nanobelts - materials, properties and devices; vol II: nanowires and nanobelts of functional materials. Kluwer Academic Publisher
7. Sung JH, Lee YS, Lim JW, Hong YH, Lee DD (2000) Sens Actuators B 66:149
8. Giefers H, Porsch F, Wortmann G (2005) Solid State Ionics 167:199
9. Fouad OA (2006) J Nanosci Nanotechnol 6:2090
10. Jie J, Wang G, Han X, Hou JG (2004) J Phys Chem B 108:17027
11. Sangaletti L, Depro LE, Dieguez A, Marca G, Morante JR, Rodringuez AR, Sberveglieri G (1997) Sens Actuator B 44:268
12. Ristoscu C, Cultera L, Dima A, Perrone A, Cutting R, Du HL, Busiakiewicz A, Klusek Z, Datta PK, Rose SR (2005) Appl Surf Sci 247:95
13. Zhu H, Yang D, Yu G, Zhang H, Jin D, Yao K (2006) J Phys Chem B 110:7631
14. Xu J, Jia X, Lou X, Shen J (2006) Soild-State Electron 50:504
15. Manna L, Scher EC, Alivisatos AP (2000) J Am Chem Soc 122:12700
16. Fouad OA (2006) Cryst Res Technol 41:880
17. Yang P, Wu Y, Fan R (2002) Int J Nanosci 1:1
18. El-Shall MS, Graiver D, Pernisz U, Baraton MI (1995) Nanostruct Mater 6:297
19. El-Shall MS, Abdelsayed V, Pithawalla YB, Alsharach E, Deevi SC (2003) J Phys Chem B 107:2882
20. Chen ZG, Li F, Liu G, Tang Y, Cong H, Lu GQ, Cheng HM (2006) J Nanosci Nanotechnol 6:704
21. Kumar N, Dorfman A, Hahm J (2005) J Nanosci Nanotechnol 5:19165
22. Glaspell G, Fuco L, El-Shall MS (2005) J Phys Chem B 109:17350
23. El-Shall MS, Li S, Graiver D, Pernisz UC (1996) In: Chow G, Gonsalves KE (ed) Nanotechnology: molecularly designed nanostructural materials. ACS Symposium Series 622, Chap. 5, p 79
24. El-Shall MS, Graiver D, Pernisz UC (2000) US Patent 6, 136, 156
25. Morales AM, Lieber CM (1998) Science 279:208
26. Dai Y, Zhang Y, Wang ZL (2003) Solid State Commun 126:629
27. Ghoshal T, Kar S, Chaudhuri S (2006) J Cryst Growth 293:438
28. Provenzano PL, Jindal GR, Sweet JR, White WB (2001) J Lumin 92:297
29. Gu F, Wang SF, Song CF, Lü MK, Qi YX, Zhou GJ, Xu D, Yuan DR (2003) Chem Phys Lett 372:451
30. Huang MH, Wu Y, Feick H, Tran N, Weber E, Yang PD (2000) Adv Mater 13:113
31. Lu JG, Ye ZZ, Huang JY, Zhu LP, Zhao BH (2006) Appl Phys Lett 88:063110
32. Wu X, Zou B, Xu J, Yu B, Tang G, Zhang G, Chen W (1997) Nanostruct Mater 8:179
33. Hu J, Bando Y, Liu Q, Golberg D (2003) Adv Funct Mater 13:493
34. Kim TW, Lee DU (2000) J Appl Phys 15:3759
35. Brus LE (1991) Appl Phys A 53:465
36. Wang L, Zhang X, Liao X, Yang W (2005) Nanotechnology 16:2928
37. Wang JX, Xie SS, Gao Y, Yan XO, Liu DF, Yuan HJ, Zhou ZP, Song L, Liu LF, Zhou WY, Wang G (2004) J Cryst Growth 267:177