On the characteristics of zinc oxide films grown on (11-20) sapphire substrates by atomic layer deposition using diethylzinc and nitrous oxide

ECS Transactions

Volumn 19, Issue 2, 2009, Pages 843-853

  Yen, Kuo Yi ^a   Liu, Kuang Pi ^a   Lin, Yen Ting ^a   Gong, Jyh Rong ^a   Tsai, Kuen Yau ^a   Lyu, Dong Yuan ^b   Lin, Tai Yuan ^b   Liang, Shih Chang ^c   Ni, Guo Yu ^c   Jih, Far Wen ^c  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; BUFFER LAYERS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; LOW-K DIELECTRIC; METALLIC FILMS; NITRIDES; NITROGEN OXIDES; OPTICAL PROPERTIES; OXIDE MINERALS; SAPPHIRE; SILICA; SILICON NITRIDE; SUBSTRATES; TEMPERATURE; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

BUFFER LAYER ANNEALING; C-AXIS-PREFERRED ORIENTATION; DEFECT LUMINESCENCE; HETERO INTERFACES; NEAR BAND EDGE EMISSIONS; PHOTOLUMINESCENCE SPECTRUM; POST ANNEALING TREATMENT; SAPPHIRE SUBSTRATES;

OXIDE FILMS;

EID: 76549112511     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3122138     Document Type: Conference Paper

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