Spectroscopic ellipsometry investigations of the optical properties of manganese doped bismuth vanadate thin films

Materials Research Bulletin

Volumn 45, Issue 4, 2010, Pages 464-473

  Kumari, Neelam ^a   Krupanidhi, S B ^a   Varma, K B R ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Atomic force microscopy; Laser deposition; Optical materials; Optical properties; Thin films

Indexed keywords

ATOMIC FORCE; BISMUTH VANADATES; DISPERSION RELATIONS; ELLIPSOMETRIC DATA; EXTINCTION COEFFICIENTS; FOUR-PHASE; ION VACANCY; LASER DEPOSITION; LASER DEPOSITIONS; LORENTZ OSCILLATOR; MN CONTENT; OPTICAL BAND GAP ENERGY; PLATINIZED SILICON SUBSTRATES; UV-VISIBLE;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ATOMS; BISMUTH; DEPOSITION; FILM PREPARATION; MANGANESE; MANGANESE COMPOUNDS; MATERIALS PROPERTIES; MULTILAYER FILMS; OPTICAL CONSTANTS; OPTICAL MULTILAYERS; OXYGEN; PULSED LASER DEPOSITION; PULSED LASERS; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPIC ELLIPSOMETRY; SURFACE ROUGHNESS; THIN FILMS; ULTRAVIOLET LASERS;

OPTICAL FILMS;

EID: 76449119567     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2009.11.004     Document Type: Article

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