Electron transport in metal-amorphous silicon-metal memory devices

IEICE Transactions on Electronics

Volumn E84-C, Issue 9, 2001, Pages 1197-1201

  Hu, Jian ^a   Hajto, Janos ^a   Snell, Anthony J ^b   Rose, Mervyn J ^c  

^a EDINBURGH NAPIER UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

^c UNIVERSITY OF DUNDEE   (United Kingdom)

Author keywords

Amorphous silicon; Conducting filament; Memory switching; Tunnelling

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CONDUCTANCE; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING;

MEMORY SWITCHING DEVICES;

DATA STORAGE EQUIPMENT;

EID: 0035444403     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

1. Amorphous silicon analogue memory elements
2. Quantized electron-transport in amorphous-silicon memory structures
3. Quantized electron effects in metal/a-Si:H/metal thin film structures
4. Metal incorporation and heat-pulse measurement in amorphous-hydrogenated-silicon quantum devices
5. Conduction in glasses containing transition metal ions
6. Anomalous high zero bias resistance in metal-amorphous silicon-metal structures
7. Superconductivity of small tin particles measured by tunneling
8. Structure and electrical properties of granular metal films
9. Electrical conduction mechanism in ultra-thin evaporated metal films
10. Electrical conduction in ultra thin metal films
11. +a-Si:H/V analog switching devices
12. Room-temperature single-electron memory
13. Tunneling of a wave packet