Charging energy, self-interaction correction and transport energy gap for a nanogap organic molecular junction

Organic Electronics

Volumn 11, Issue 2, 2010, Pages 332-337

  Abad, E ^a   Gonzalez C ^b   Ortega, J ^a   Flores, F ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

Charge neutrality level; Self interaction correction

Indexed keywords

CHARGE TRANSFER; ELECTRONIC PROPERTIES; ENERGY GAP; GROUND STATE; METAL ANALYSIS; MOLECULAR ORBITALS; NANOSTRUCTURES;

CHARGE NEUTRALITY LEVEL; CHARGING ENERGIES; FRONTIER MOLECULAR ORBITALS; INDUCED DENSITY OF INTERFACE STATES MODELS; INTERFACE BARRIER; MOLECULAR JUNCTION; SELF-INTERACTION CORRECTIONS; STRUCTURAL AND ELECTRONIC PROPERTIES;

INTERFACE STATES;

EID: 76449104791     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.11.012     Document Type: Article

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