Modifications of the electronic structure of GaSb surface by chalcogen atoms: S, Se, and Te

Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4302-4307

  Liu, Z Y ^a   Gokhale, A A ^a   Mavrikakis, M ^a   Saulys, D A ^a   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGENIDE TREATMENT; CHALCOGENS; DENSITY OF STATES (DOS); ELECTRONIC PASSIVATION EFFICIENCY;

ELECTRONIC STRUCTURE; MONOLAYERS; PASSIVATION; PHOTOLUMINESCENCE; SELENIUM; SULFUR; TELLURIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM COMPOUNDS;

EID: 7644239887     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1790572     Document Type: Article

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