Evidence for the formation of ordered layers on SeS2 treated GaAs(110) using atomic force microscopy

Journal of Applied Physics

Volumn 80, Issue 11, 1996, Pages 6274-6278

  Kuruvilla, Beena Annie ^a   Datta, A ^a,b   Shekhawat, G S ^a,c   Sharma, A K ^a,c   Vyas, P D ^a,c   Gupta, R P ^a,c   Kulkarni, S K ^a  

^a UNIVERSITY OF PUNE   (India)

^b Alchemie Research Centre   (India)

^c CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042380850     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363703     Document Type: Article

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