Electrochemical study of Si/SiO2/Si3N4 structures and gold electrodes functionalised with amide thiacalix[4]arene for the detection of Hg2+ ions in solution

Sensor Letters

Volumn 7, Issue 5, 2009, Pages 694-701

  Bergaoui, Y ^a   Ben Ali, M ^a,b   Abdelghani, A ^a   Vocanson, F ^c   Jaffrezic Renault, N ^d  

^a UNIVERSITÉ DE CARTHAGE   (Tunisia)

^b INSTITUT SUPÉRIEUR DES SCIENCES APPLIQUÉES ET DE TECHNOLOGIE DE SOUSSE   (Tunisia)

^c UNIVERSITÉ JEAN MONNET   (France)

^d UNIVERSITÉ LYON 1   (France)

Author keywords

Amide thiacalixarene; ATR IRTF; EIS structure; Sensors

Indexed keywords

AMIDES; CHEMICAL DETECTION; ELECTROCHEMICAL ELECTRODES; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; ELECTROCHEMICAL SENSORS; ELECTROLYTES; ENVIRONMENTAL MANAGEMENT; GOLD COATINGS; GOLD DEPOSITS; IONS; SENSORS; SILICON COMPOUNDS; THIN FILMS; TRANSDUCERS;

ATR-IRTF; CHEMICAL COMPOSITIONS; EIS STRUCTURES; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY MEASUREMENTS; ELECTROCHEMICAL STUDIES; ENVIRONMENTAL CONTROL; LOW DETECTION LIMIT; THIACALIXARENES;

GOLD COMPOUNDS;

EID: 76249109975     PISSN: 1546198X     EISSN: None     Source Type: Journal    
DOI: 10.1166/sl.2009.1133     Document Type: Article

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