EIS field effect structures functionalized by p-tert-butylcalix[6]arene for Ni2+ detection

Materials Science and Engineering C

Volumn 25, Issue 1, 2005, Pages 61-66

  Barhoumi, H ^a,b   Maaref, A ^a   Mlika, R ^a   Martelet, C ^b   Jaffrezic Renault, N ^b   Ponsonnet, L ^b  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b ECOLE CENTRALE DE LYON   (France)

Author keywords

Calixarene; Coating; Impedance measurements; Wettability

Indexed keywords

CAPACITANCE; CHEMICAL SENSORS; DEMODULATION; ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; SPIN COATING; THIN FILMS;

CALIXARENE; ELECTROLYTE-INSULATOR-SEMICONDUCTOR (EIS); IMPEDANCE MEASUREMENT; WETTABILITY;

NICKEL;

EID: 10044224569     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2004.07.002     Document Type: Article

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