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Volumn 258, Issue 1, 2001, Pages 209-220
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Electromechanical properties of ferroelectric films for MEMS
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Author keywords
actuators; domains; ferroelectric thin films; piezoelectricity
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Indexed keywords
AC ELECTRIC FIELD;
BULK MATERIALS;
DOMAIN WALL MOTION;
DOMAINS;
ELECTROMECHANICAL PROPERTY;
ELECTROMECHANICAL RESPONSE;
ELECTROSTRICTION COEFFICIENT;
LARGE ANISOTROPY;
MICRO DEVICES;
MICROELECTROMECHANICAL SYSTEMS;
MORPHOTROPIC PHASE BOUNDARIES;
PIEZOELECTRIC PROPERTY;
PIEZOELECTRICS;
PREFERRED ORIENTATIONS;
PZT FILM;
RELAXOR SINGLE CRYSTALS;
RHOMBOHEDRAL COMPOSITION;
RIGID SUBSTRATES;
SI TECHNOLOGY;
SMALL GRAIN SIZE;
THIN FILM FERROELECTRICS;
THIN LAYERS;
ACTUATORS;
ANISOTROPY;
COMPOSITE MICROMECHANICS;
CRYSTALLOGRAPHY;
ELECTRIC FIELDS;
FERROELECTRIC DEVICES;
FERROELECTRIC MATERIALS;
FERROELECTRIC THIN FILMS;
FERROELECTRICITY;
FILMS;
MATERIALS HANDLING EQUIPMENT;
MATERIALS PROPERTIES;
MEMS;
MICROELECTROMECHANICAL DEVICES;
PIEZOELECTRIC DEVICES;
PIEZOELECTRICITY;
SINGLE CRYSTALS;
VAPOR DEPOSITION;
FERROELECTRIC FILMS;
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EID: 75949094031
PISSN: 00150193
EISSN: 15635112
Source Type: Journal
DOI: 10.1080/00150190108008674 Document Type: Conference Paper |
Times cited : (10)
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References (26)
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