Solar cells with 11% efficiency on ribbon-growth-on-substrate (RGS) silicon

Progress in Photovoltaics: Research and Applications

Volumn 6, Issue 3, 1998, Pages 163-167

  Hahn, G ^a   Zechner, C ^a   Bitnar, B ^a   Spiegel, M ^a   Jooss, W ^a   Fath, P ^a   Willeke, G ^a   Bucher, E ^a   Hofs H U ^b  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b BAYER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT DENSITY; EFFICIENCY; HYDROGEN; IMPURITIES; PASSIVATION; PERFORMANCE; SEMICONDUCTOR GROWTH; SILICON WAFERS;

ALUMINUM GETTERING; DIFFUSION LENGTH; FILL FACTOR; MECHANICAL SURFACE TEXTURIZATION; OPEN CIRCUIT VOLTAGE; RIBBON GROWTH ON SUBSTRATE SILICON; SHORT CIRCUIT CURRENT DENSITY;

SOLAR CELLS;

EID: 0032064413     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1099-159x(199805/06)6:3<163::aid-pip219>3.0.co;2-h     Document Type: Article

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