Influence of heavy doping on Seebeck coefficient in silicon-on-insulator

Applied Physics Letters

Volumn 96, Issue 1, 2010, Pages

  Ikeda, H ^a   Salleh, F ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FORMATIONS; CONCENTRATION DEPENDENCE; DENSITY-OF-STATES; DOPED SILICON; ENERGY DERIVATIVES; ENERGY SHIFT; FERMI ENERGY; HEAVILY DOPED; HEAVY DOPING; METALLIC MATERIAL; SI-BASED; SILICON ON INSULATOR; THEORETICAL MODELS;

DOPING (ADDITIVES); MICROSENSORS; PHOSPHORUS;

SEEBECK COEFFICIENT;

EID: 75749153608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3282783     Document Type: Article

References (18)

1. G. D. Mahan, Solid State Phys. SSPHAE 0081-1947 51, 81 (1997). 10.1016/S0081-1947(08)60190-3
2. D. M. Rowe, Thermoelectrics Handbook, Macro to Nano (CRC, Taylor & Francis Group, Boca Raton, 2006), Chap. 1, p. 7.
3. F. Salleh, K. Asai, A. Ishida, and H. Ikeda, Appl. Phys. Express APECE4 1882-0778 2, 071203 (2009). 10.1143/APEX.2.071203
4. F. Salleh, K. Asai, A. Ishida, H. Ikeda, and J. Automation, J. Autom. Mobile Rob. Intell. Syst. ZZZZZZ 1897-8649 3, 49 (2009).
5. T. H. Geballe and G. W. Hull, Phys. Rev. PRVAAH 0096-8250 98, 940 (1955). 10.1103/PhysRev.98.940
6. L. Weber and E. Gmelin, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 53, 136 (1991). 10.1007/BF00323873
7. O. Yamashita, J. Appl. Phys. JAPIAU 0021-8979 95, 178 (2004). 10.1063/1.1630361
8. A. Ishida, D. Cao, S. Morioka, Y. Inoue, and T. Kita, J. Electron. Mater. JECMA5 0361-5235 38, 940 (2009). 10.1007/s11664-009-0726-2
9. A. Ishida, T. Yamada, D. Cao, Y. Inoue, M. Veis, and T. Kita, J. Appl. Phys. JAPIAU 0021-8979 106, 023718 (2009). 10.1063/1.3182804
10. J. P. Heremans, V. Jovovic, E. S. Toberer, A. Saramat, K. Kurosaki, A. Charoenphakdee, S. Yamanaka, and G. J. Snyder, Science SCIEAS 0036-8075 321, 554 (2008). 10.1126/science.1159725
11. W. Baltensperger, Philos. Mag. PMHABF 1478-6435 44, 1355 (1953).
12. T. P. Brody, J. Appl. Phys. JAPIAU 0021-8979 33, 100 (1962). 10.1063/1.1728464
13. T. F. Lee and T. C. McGill, J. Appl. Phys. JAPIAU 0021-8979 46, 373 (1975). 10.1063/1.321346
14. D. S. Lee and J. G. Fossum, IEEE Trans. Electron Devices IETDAI 0018-9383 30, 626 (1983). 10.1109/T-ED.1983.21181
15. E. O. Kane, Phys. Rev. PRVAAH 0096-8250 131, 79 (1963). 10.1103/PhysRev.131.79
16. T. N. Morgan, Phys. Rev. PRVAAH 0096-8250 139, A343 (1965). 10.1103/PhysRev.139.A343
17. C. Erginsoy, Phys. Rev. PRVAAH 0096-8250 88, 893 (1952). 10.1103/PhysRev.88.893
18. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford, 1979), p. 52.