Seebeck effect in IV-VI semiconductor films and quantum wells

Journal of Electronic Materials

Volumn 38, Issue 7, 2009, Pages 940-943

  Ishida, Akihiro ^a   Cao, Daoshe ^a   Morioka, Sinsuke ^a   Inoue, Yoku ^a   Kita, Takuji ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

Boltzmann equation; EuTe; IV VI materials; PbSe; PbTe; Seebeck coefficient; Superlattice

Indexed keywords

BAND GAPS; DENSITY OF STATE; DIFFUSION CURRENTS; EFFECTIVE MASS; EUTE; EXPERIMENTAL VALUES; IV-VI MATERIALS; MASS DIFFERENCE; NON PARABOLICITY; PBSE; PBTE; QUANTUM WELL; SEMICONDUCTOR FILMS; STRONG ENHANCEMENT; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; THEORETICAL CALCULATIONS;

ENERGY GAP; SEEBECK COEFFICIENT; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES;

BOLTZMANN EQUATION;

EID: 67650475899     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0726-2     Document Type: Conference Paper

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