Parasitic capacitance effect on programming performance of phase change random access memory devices

Applied Physics Letters

Volumn 96, Issue 4, 2010, Pages

  Yeo, E G ^a,b   Shi, L P ^a   Zhao, R ^a   Lim, K G ^a   Chong, T C ^a,c   Adesida, I ^b  

^a DATA STORAGE INSTITUTE   (Singapore)

^b University of Illinois at Urbana Champaign   (United States)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STATE; APPLIED VOLTAGES; FALL TIME; HIGH FREQUENCY OPERATION; PARASITIC CAPACITANCE; PARASITIC CAPACITANCE EFFECTS; PHASE CHANGE RANDOM ACCESS MEMORY; PHASE CHANGE RANDOM ACCESS MEMORY DEVICES; PROGRAMMING PERFORMANCE; QUENCHING TIME;

AMORPHIZATION; CAPACITANCE; CRYSTALLIZATION; RANDOM ACCESS STORAGE;

PHASE CHANGE MEMORY;

EID: 75749093488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3298368     Document Type: Article

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