Application of double gate ion sensitive field effect transistor for detection of fluid flow rate in micro-channel

Advanced Materials Research

Volumn 93-94, Issue , 2010, Pages 109-112

  Jiemsakul, T ^a   Trithaveesak, O ^b   Bunjongpru, W ^a,b,c   Hruanun, C ^b   Poyai, A ^b   Nukeaw, J ^a,c  

^a KING MONGKUT'S INSTITUTE OF TECHNOLOGY LADKRABANG   (Thailand)

^b NATIONAL ELECTRONICS AND COMPUTER TECHNOLOGY CENTER   (Thailand)

^c Thailand Ministry of Science and Technology   (Thailand)

Author keywords

Flow rate; ISFET; Micro channel

Indexed keywords

DEEP REACTIVE ION ETCHERS; DOUBLE GATE; FLOW CHANNELS; FLOW-SENSORS; FLUID FLOW RATES; GLASS SUBSTRATES; ISFET; LOW FLOW; METAL ELECTRODES; MICRO FLOW SENSORS; POLYDIMETHYLSILOXANE PDMS; RF PLASMA; SODIUM NITRATE SOLUTION; WORKING RANGE;

CHANNEL FLOW; ELECTRODES; FIELD EFFECT TRANSISTORS; ION SENSITIVE FIELD EFFECT TRANSISTORS; IONS; MICROCHANNELS; MICROMETERS; MOLDS; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SILICON WAFERS; SILICONES;

FLOW OF FLUIDS;

EID: 75649120791     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.93-94.109     Document Type: Conference Paper

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