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Journal of Crystal Growth

Volumn 271, Issue 3-4, 2004, Pages 495-512

Monte Carlo modeling of dopant segregation

(2) Beatty, Kirk M a Jackson, Kenneth A a,b

a University of Arizona (United States)

b NONE (United States)

Author keywords

A1. Growth models; A1. Impurities; A1. Interfaces; A1. Segregations; A1. Solidification

Indexed keywords

CRYSTAL IMPURITIES; CRYSTALLIZATION; DIFFUSION; ENTROPY; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTOR DOPING; SOLIDIFICATION; SURFACE ROUGHNESS;

ENTROPY OF FUSION; GROWTH MODELS; GROWTH RATES; LIQUID DIFFUSIVITY;

SEGREGATION (METALLOGRAPHY);

EID: 7544230468 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.07.074 Document Type: Article

Times cited : (19)

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