High-Speed InSb photodetectors on GaAs for mid-IR applications

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 10, Issue 4, 2004, Pages 766-770

  Kimukin, Ibrahim ^a   Biyikli, Nectni ^a   Kartaloǧlu, Tolga ^a   Aytür, Orhan ^a   Ozbay, Ekmel ^a  

^a BILKENT UNIVERSITY   (Turkey)

Author keywords

High speed; Infrared; Photodetector

Indexed keywords

ARSENIC; BANDWIDTH; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; FOURIER TRANSFORMS; INFRARED RADIATION; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; VOLTAGE MEASUREMENT;

HIGH-SPEED; MIDINFRARED (MID-IR); WAVELENGTH;

PHOTODETECTORS;

EID: 7544221681     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2004.833891     Document Type: Article

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