InSb infrared p-i-n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy

Solid-State Electronics

Volumn 42, Issue 6, 1998, Pages 1039-1044

  Tevke, Ahmet ^a   Besikci, Cengiz ^a   Van Hoof, Chris ^b   Borghs, G ^b  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DIFFUSION IN SOLIDS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SILICON WAFERS;

LATTICE MISMATCH;

PHOTODETECTORS;

EID: 0032089838     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00124-5     Document Type: Article

References (25)

1. Michel, E., Singh, G., Slivken, S., Besikci, C., Bove, P., Ferguson, I. and Razeghi, M., Appl. Phys. Lett., 1994, 65, 3338.
2. Liu, W.K., Winesett, J., Ma, W., Zhang, X., Santos, M.B., Fang, X.M. and McCann, P.J., J. Appl. Phys., 1997, 81, 1708.
3. Chyi, J.I., Biswas, D., Iyer, S.V., Kumar, N.S., Morkoc, H., Bean, R., Zanio, K., Lee, H.Y. and Chen, H., Appl. Phys. Lett., 1989, 54, 1016.
4. Choi, Y.H., Sudharsanan, R., Besikci, C., Bigan, E. and Razeghi, M., Mat. Res. Soc. Symp. Proc., 1993, 281, 375.
5. Ivanov, S.V., Boudza, A.A., Kutt, R.N., Ledentsov, N.N., Meltser, B.Y., Ruvimov, S.S., Shaposhnikov, S.V. and Kopev, P.S., J. Cryst. Growth, 1995, 156, 191.
6. Besikci, C., Choi, Y.H., Sudharsanan, R. and Razeghi, M., J. Appl. Phys., 1993, 73, 5009.
7. Yano, M., Takase, T. and Kimata, M., Phys. Stat. Sol.54, 1979, A, 707.
8. Michel, E., Kim, J.D., Javadpour, S., Xu, J., Ferguson, I. and Razeghi, M., Appl. Phys. Lett., 1996, 69, 215.
9. Noreika, A.J., Greggi, J., Takei, W.J. and Francombe, M.H., J. Vac. Sci. Technol.1, 1983, A, 558.
10. Chyi, J.I., Kalem, S., Kumar, N.S., Litton, C.W. and Morkoc, H., Appl. Phys. Lett., 1988, 53, 1092.
11. Soderstrom, J.R., Cumming, M.M., Tao, J.Y. and Andersson, T.G., Semicond. Sci. Technol., 1992, 7, 337.
12. Williams, G.M., Whitehouse, C.R., Mcconville, C.F., Cullis, A.G., Ashley, T., Courtney, S.J. and Elliot, C.T., Appl. Phys. Lett., 1988, 53, 1189.
13. Oh, J.E., Bhattacharya, P.K., Chen, Y.C. and Tsukamoto, S., J. Appl. Phys., 1989, 66, 3618.
14. Parker, S.D., Williams, R.L., Droopad, R., Stradling, R.A., Barnham, K.W.J., Holmes, S.N., Laverty, J., Phillips, C.C., Skuras, E., Thomas, R., Zhang, X., Staton-Bevan, A. and Pashley, D.W., Semicond. Sci. Technol., 1989, 4, 663.
15. Thompson, P.E., Davis, J.L., Waterman, J., Wagner, R.J., Gammon, D., Gaskill, D.K. and Stahlbush, R., J. Appl. Phys., 1991, 69, 7166.
16. Chiang, P.K. and Bedair, S.M., J. Electrochem. Soc. Solid-State Sci. Technol., 1984, 131, 2422.
17. Biefeld, R.M. and Hebner, G.A., Appl. Phys. Lett., 1990, 57, 1563.
18. Stradling, R.A., Semicond. Sci. Technol., 1991, 6, C52.
19. Besikci, C., Choi, Y.H., Labeyrie, G., Bigan, E., Razeghi, M., Cohen, J.B., Carsello, J. and Dravid, V.P., J. Appl. Phys., 1994, 76, 5820.
20. Michel, E., Xu, J., Kim, J.D., Ferguson, I. and Razeghi, M., IEEE Photonics Technol. Lett., 1996, 8, 673.
21. Lee, G.S., Thompson, P.E., Davis, J.L., Omaggio, J.P. and Schmidt, W.A., Solid-State Electronics, 1993, 36, 387.
22. Dobbelaere, W., Boeck, J.D., Heremans, P., Mertens, R., Borghs, G., Luyten, W. and Landuyt, J.V., Appl. Phys. Lett., 1992, 60, 3256.
23. Forrest, S.R., IEEE J. Quantum Electron., 1981, 17, 217.
24. Hopkins, F.K. and Boyd, J.T., Infrared Phys., 1984, 24, 391.
25. Landolt-Bornstein, ed. O. Madelung, Group III, 1982, 17a, Springer, New York.