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Volumn , Issue , 2008, Pages 254-263

Influence of laser wavelength and pulse duration on processing of crystalline silicon

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRONICS INDUSTRY; ENERGY GAP; SILICON WAFERS;

EID: 75149133676     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.2351/1.5061384     Document Type: Conference Paper
Times cited : (4)

References (17)
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    • Göttingen
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    • (2005) Proc. of Technology Seminar, Laseranwendung in der Photovoltaik
    • Grahl, T.1
  • 3
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    • Laser Dicing of Silicon: Comparison of Ablation Mechanism with a Novel Technology of Thermally Induced Stress
    • Quebec
    • O. Haupt et al.: Laser Dicing of Silicon: Comparison of Ablation Mechanism with a Novel Technology of Thermally Induced Stress, Proc. of LPM2008, Quebec, 2008
    • (2008) Proc. of LPM2008
    • Haupt, O.1
  • 6
    • 56749164784 scopus 로고    scopus 로고
    • Laser technology for cost reduction in silicon solar cell production
    • Paper M704
    • A. Schoonderbeek et al.: Laser technology for cost reduction in silicon solar cell production, Proc. of ICALEO, Paper M704, 2006
    • (2006) Proc. of ICALEO
    • Schoonderbeek, A.1
  • 7
    • 0030211787 scopus 로고    scopus 로고
    • Femtosecond, picosecond and nanosecond laser ablation of solids
    • B. N. Chichkov et al.: Femtosecond, picosecond and nanosecond laser ablation of solids, J. of Appl. Phys., A 63, 109-115, 1996
    • (1996) J. of Appl. Phys., A , vol.63 , pp. 109-115
    • Chichkov, B.N.1
  • 9
    • 3142685063 scopus 로고    scopus 로고
    • A. Schoonderbeek et al.: The influence of the pulse length on the drilling of metals with an excimer laser, J. of Laser Appl., 16 nr. 2, 85-91, 2004
    • A. Schoonderbeek et al.: The influence of the pulse length on the drilling of metals with an excimer laser, J. of Laser Appl., Vol. 16 nr. 2, 85-91, 2004
  • 10
    • 0020126962 scopus 로고
    • Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by elipsometry
    • G.E. Jellison et al.: Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by elipsometry, J. of Appl. Phys., Vol. 53 nr. 5, 1982
    • (1982) J. of Appl. Phys , vol.53 , Issue.5
    • Jellison, G.E.1
  • 11
    • 0004115497 scopus 로고    scopus 로고
    • 3rd Edition. Heidelberg: Springer Verlag, ISBN 3-540-66891-8
    • D. Bäuerle: Laser Processing and Chemistry, 3rd Edition. Heidelberg: Springer Verlag, ISBN 3-540-66891-8, 2000
    • (2000) Laser Processing and Chemistry
    • Bäuerle, D.1
  • 13
    • 0031998927 scopus 로고    scopus 로고
    • A review of ultrashort pulsed laser ablation of materials
    • M.D. Shirk et al.: A review of ultrashort pulsed laser ablation of materials, J. Laser Appl., Vol. 10, 18-28, 1998
    • (1998) J. Laser Appl , vol.10 , pp. 18-28
    • Shirk, M.D.1
  • 15
    • 65649130371 scopus 로고    scopus 로고
    • Extensive Micro-Structuring of Metals using Picosecond Pulses - Ablation Behavior and Industrial Relevance
    • Quebec
    • F. Siegel et al.: Extensive Micro-Structuring of Metals using Picosecond Pulses - Ablation Behavior and Industrial Relevance, Proc. of LPM2008, Quebec, 2008
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  • 16
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    • Laser technology for back-contacted silicon solar cells
    • Paper M703
    • P. Engelhart et al.: Laser technology for back-contacted silicon solar cells, Proc. of ICALEO, Paper M703, 2006
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    • Engelhart, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.