메뉴 건너뛰기




Volumn 2, Issue , 2008, Pages 1-65

Silicon Processing

Author keywords

Electronics manufacturers; Lithographic; Metallurgical grade silicon; Monocrystals; Pelletization

Indexed keywords

ELECTRONICS MANUFACTURERS; LITHOGRAPHIC; METALLURGICAL GRADE SILICONS (MGSI); MONO-CRYSTALS; PELLETIZATION;

EID: 84952934393     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527621828.ch1     Document Type: Chapter
Times cited : (2)

References (151)
  • 1
    • 0011122042 scopus 로고
    • Huff, H. R., Kriegler, R. J., Takeishi, Y. (Eds.). Pennington, NJ: Electrochem. Soc., PV81-5
    • Abe, T., Kikuchi, K., Shirai, S., Muraoka, S. (1981), in: Semiconductor Silicon 1981: Huff, H. R., Kriegler, R. J., Takeishi, Y. (Eds.). Pennington, NJ: Electrochem. Soc., PV81-5, p. 54.
    • (1981) Semiconductor Silicon 1981 , pp. 54
    • Abe, T.1    Kikuchi, K.2    Shirai, S.3    Muraoka, S.4
  • 6
    • 84952939865 scopus 로고
    • ESSDERC, Munich: Sirtl, E., Goorissen, J., Wagner, P. (Eds.). Pennington, NJ: Electrochem. Soc., PV83-4
    • Barraclough, K. G. (1982), in: Symp. Aggregation Phenomena of Point Defects in Silicon, ESSDERC, Munich: Sirtl, E., Goorissen, J., Wagner, P. (Eds.). Pennington, NJ: Electrochem. Soc., PV83-4, p. 176.
    • (1982) Symp. Aggregation Phenomena of Point Defects in Silicon , pp. 176
    • Barraclough, K.G.1
  • 8
    • 17144463562 scopus 로고
    • Huff, H. R., Kolbesen, B. O., Abe, T. (Eds.). Pennington, NJ: Electrochem. Soc., PV 86-4
    • Barraclough, K. G., Wilkes, J. G. (1986), in: Semiconductor Silicon 1986: Huff, H. R., Kolbesen, B. O., Abe, T. (Eds.). Pennington, NJ: Electrochem. Soc., PV 86-4, p. 889
    • (1986) Semiconductor Silicon 1986 , pp. 889
    • Barraclough, K.G.1    Wilkes, J.G.2
  • 13
    • 84952937502 scopus 로고
    • Bischoff, F. (1954). Patent DBP 1 134 459.
    • (1954)
    • Bischoff, F.1
  • 26
    • 84952908211 scopus 로고
    • Huff, H. R., Sirtl, E. (Eds.). Pennington, NJ: Electrochem. Soc., PV77-2
    • Carruthers, J. R., Witt, A. F., Reusser, R. E. (1977), in: Semiconductor Silicon 1977: Huff, H. R., Sirtl, E. (Eds.). Pennington, NJ: Electrochem. Soc., PV77-2, p. 70.
    • (1977) Semiconductor Silicon 1977 , pp. 70
    • Carruthers, J.R.1    Witt, A.F.2    Reusser, R.E.3
  • 33
    • 84952919536 scopus 로고
    • Huff, H. R., Kreigler, R. J., Takeishi, Y. (Eds.). Pennington, NJ: Electrochem. Soc., PV81- 5
    • Craven, R. A. (1981), in: Semiconductor Silicon 1981: Huff, H. R., Kreigler, R. J., Takeishi, Y. (Eds.). Pennington, NJ: Electrochem. Soc., PV81- 5, p. 254.
    • (1981) Semiconductor Silicon 1981 , pp. 954
    • Craven, R.A.1
  • 34
    • 84915671100 scopus 로고
    • Huff, H. R., Sirtl, E. (Eds.). Pennington, NJ: Electrochem. Soc., PV77-2
    • Crossman, L. D., Baker, J. A. (1977), in: Semiconductor Silicon 1977: Huff, H. R., Sirtl, E. (Eds.). Pennington, NJ: Electrochem. Soc., PV77-2, p. 18.
    • (1977) Semiconductor Silicon 1977 , pp. 18
    • Crossman, L.D.1    Baker, J.A.2
  • 39
    • 0042902043 scopus 로고
    • Proc. 15th Int. Conf. Defects in Semiconductors
    • Budapest, Aug. 1988
    • Davies, G. (1989), in: Proc. 15th Int. Conf. Defects in Semiconductors, Budapest, Aug. 1988. Muter: Sci. Forum 38-41 (1).
    • (1989) Muter: Sci. Forum , vol.38-41 , pp. 1
    • Davies, G.1
  • 40
    • 17144441946 scopus 로고
    • Munich. Pennington, NJ: Electrochem. Soc., P V83-4
    • de Kock, A. R. J. (1983), Proc. Symp. ESSDERC, Munich. Pennington, NJ: Electrochem. Soc., P V83-4, P. 58
    • (1983) Proc. Symp. ESSDERC, Munich. , pp. 58
    • de Kock, A.R.J.1
  • 49
    • 84952917428 scopus 로고
    • Munich: Pennington, NJ: Electrochem. Soc.P, V83-4
    • Gosele, U., Tan, T. Y. (1983), Proc. Symp. ESSDERC, Munich: Pennington, NJ: Electrochem. Soc.P, V83-4, p. 17
    • (1983) Proc. Symp. ESSDERC , pp. 17
    • Gosele, U.1    Tan, T.Y.2
  • 54
    • 0003767280 scopus 로고
    • Huff, H. R., Sirtl, E. (Eds.). Pennington, NJ: Electrochem. Soc., PV77-2
    • Herzer, H. (1977), in: Semiconductor Silicon 1977: Huff, H. R., Sirtl, E. (Eds.). Pennington, NJ: Electrochem. Soc., PV77-2, p. 106.
    • (1977) Semiconductor Silicon 1977 , pp. 106
    • Herzer, H.1
  • 64
    • 0004174678 scopus 로고
    • Supplement to: J. Phys. Chem. Solids. Ox- ford: Pergamon, p. 659
    • Hurle, D. J. T. (1967), in: Crystal Growth: Peiser, H. S. (Ed.). Supplement to: J. Phys. Chem. Solids. Ox- ford: Pergamon, p. 659.
    • (1967) Crystal Growth , pp. 659
    • Hurle, D.J.T.1
  • 66
    • 84952927904 scopus 로고
    • in, Huff, H. R., Kreigler, R. J., Takeishi, Y. (Eds.). Pennington, NJ: Electrochem. Soc., PV81-5
    • Inoue, N., Wada, K., Osaka, J. (1981), in: Semiconductor Silicon 1981: Huff, H. R., Kreigler, R. J., Takeishi, Y. (Eds.). Pennington, NJ: Electrochem. Soc., PV81-5, p. 282.
    • (1981) Semiconductor Silicon 1981 , pp. 292
    • Inoue, N.1    Wada, K.2    Osaka, J.3
  • 68
    • 84952878718 scopus 로고
    • Recent results, private communication
    • Jackson, K. A. (1990), Recent results, private communication.
    • (1990)
    • Jackson, K.A.1
  • 75
    • 84952877683 scopus 로고    scopus 로고
    • Keller, W. (1959), Platent DBP 1 148 525.
    • Keller, W.1
  • 89
    • 84952892576 scopus 로고
    • for VLSI: Reif, R. (Ed.). Pennington, NJ: Electrochem. Soc.
    • Lin, W., Moerchel, K. G. (1986), in: Reduced Temp. Proc. for VLSI: Reif, R. (Ed.). Pennington, NJ: Electrochem. Soc., pp. 438-452.
    • (1986) Reduced Temp. Proc. , pp. 438-452
    • Lin, W.1    Moerchel, K.G.2
  • 96
    • 0002697365 scopus 로고
    • Huff, H. R., Kolbesen, B. O., Abe, T. (Eds.). Pennington, NJ: Electrochem. Soc., PV86-4
    • Moody, J. W. (l986), Proc. Semiconductor Silicon 1986: Huff, H. R., Kolbesen, B. O., Abe, T. (Eds.). Pennington, NJ: Electrochem. Soc., PV86-4, 100
    • (1986) Proc. Semiconductor Silicon 1986 , pp. 100
    • Moody, J.W.1
  • 97
    • 0022245088 scopus 로고
    • Einspruch, N. G., Huff, H. R. (Eds.). Academic Press, New York
    • Moreland, J. A. (1985), in: VLSI Electronic Microstructure Science, Vol 12: Einspruch, N. G., Huff, H. R. (Eds.). Academic Press, New York, pp. 63-87.
    • (1985) VLSI Electronic Microstructure Science , vol.12 , pp. 63-87
    • Moreland, J.A.1
  • 111
    • 84952880086 scopus 로고
    • SEMI International Standards, Materials Volume, SEMI International, Mountain View, CA. 1994
    • SEMI International Standards, Materials Volume, SEMI International, Mountain View, CA. 1994.
    • (1994)
  • 119
    • 84952879935 scopus 로고
    • Patent
    • Sundermeyer (1957), Patent.
    • (1957)
    • Sundermeyer1
  • 120
    • 0005058216 scopus 로고
    • Huff, H. R., Kreigler, R. J., Takeishi, Y. (Eds.). Pennington, NJ: Electrochem. Soc., PV81-5
    • Suzki, T., Isawa, N., Okubo, Y., Hoshi, K. (1981), in: Semiconductor Silicon 1981, Huff, H. R., Kreigler, R. J., Takeishi, Y. (Eds.). Pennington, NJ: Electrochem. Soc., PV81-5, p. 90.
    • (1981) Semiconductor Silicon 1981 , pp. 90
    • Suzki, T.1    Isawa, N.2    Okubo, Y.3    Hoshi, K.4
  • 128
    • 84952930833 scopus 로고
    • Theurer, H. C. (1952), Patent USP 3 060 123
    • (1952)
    • Theurer, H.C.1
  • 136
    • 4243326816 scopus 로고
    • Wada, K. (1984), Phys. Rev. B 30, 5884.
    • (1984) Phys. Rev. , vol.30 , pp. 5884
    • Wada, K.1
  • 137
    • 0005014844 scopus 로고
    • Huff, H. R., Kolbesen, B. O., Abe, T. (Eds.). Pennington, NJ: Electrochem. Soc., PV86- 4
    • Wada, K., Inoue, N. (1986), in: Semiconductor Silicon 1986: Huff, H. R., Kolbesen, B. O., Abe, T. (Eds.). Pennington, NJ: Electrochem. Soc., PV86- 4, p. 778.
    • (1986) Semiconductor Silicon 1986 , pp. 778
    • Wada, K.1    Inoue, N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.