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Volumn 5, Issue 5, 2008, Pages 1358-1361

Ion implantation induced disorder in single-crystal and sputter-deposited polycrystalline CdTe characterized by ellipsometry and backscattering spectrometry

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING SPECTROMETRY; CDTE; CRITICAL POINTS; DECHANNELING; DISLOCATION LOOP; EXTENDED DEFECT; FLUENCES; GENERAL PURPOSE; GRAIN SIZE; ION IMPLANTED; LOW LEVEL; POLYCRYSTALLINE; RUTHERFORD BACKSCATTERING/CHANNELING; SECOND-DERIVATIVE ANALYSIS; SIMULTANEOUS IMPLANTATION; SINGLE-CRYSTAL SI; SINGLE-CRYSTALLINE; SRIM SIMULATION; STOPPING AND RANGE OF IONS IN MATTERS; SURFACE SMOOTHNESS;

EID: 74549167687     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200777866     Document Type: Conference Paper
Times cited : (12)

References (13)
  • 9
    • 77951119295 scopus 로고    scopus 로고
    • The Stopping and Range of Ions in Matter, http://www.srim.org.
  • 13
    • 77951110895 scopus 로고    scopus 로고
    • P. Petrik, N. Q. Khánh, Jian Li, Jie Chen, R. W. Collins, M. Fried, G. Radnóczi, T. Lohner, and J. Gyulai, to be published
    • P. Petrik, N. Q. Khánh, Jian Li, Jie Chen, R. W. Collins, M. Fried, G. Radnóczi, T. Lohner, and J. Gyulai, to be published.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.