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Volumn 5, Issue 5, 2008, Pages 1358-1361
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Ion implantation induced disorder in single-crystal and sputter-deposited polycrystalline CdTe characterized by ellipsometry and backscattering spectrometry
c
NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
BACKSCATTERING SPECTROMETRY;
CDTE;
CRITICAL POINTS;
DECHANNELING;
DISLOCATION LOOP;
EXTENDED DEFECT;
FLUENCES;
GENERAL PURPOSE;
GRAIN SIZE;
ION IMPLANTED;
LOW LEVEL;
POLYCRYSTALLINE;
RUTHERFORD BACKSCATTERING/CHANNELING;
SECOND-DERIVATIVE ANALYSIS;
SIMULTANEOUS IMPLANTATION;
SINGLE-CRYSTAL SI;
SINGLE-CRYSTALLINE;
SRIM SIMULATION;
STOPPING AND RANGE OF IONS IN MATTERS;
SURFACE SMOOTHNESS;
AMORPHOUS MATERIALS;
CADMIUM ALLOYS;
CADMIUM COMPOUNDS;
DEFECT DENSITY;
DEFECTS;
DISLOCATIONS (CRYSTALS);
EQUATIONS OF STATE;
GRAIN SIZE AND SHAPE;
ION IMPLANTATION;
MAGNETRONS;
METHANOL;
MOLECULAR BEAM EPITAXY;
OPTICAL PROPERTIES;
SILICON;
SPECTROMETRY;
SPECTROSCOPIC ELLIPSOMETRY;
THIN FILMS;
XENON;
OPTICAL FILMS;
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EID: 74549167687
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200777866 Document Type: Conference Paper |
Times cited : (12)
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References (13)
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