Comparative study on Si and Ge p-type nanowire FETs based on full-band Non-Equilibrium Green's function simulation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2009, Pages

  Minari, Hideki ^a   Mori, Nobuya ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Germanium; Nanowire; NEGF method; Silicon; Simulation; Tight binding

Indexed keywords

COMPARATIVE STUDIES; FULL BAND; GERMANIUM NANOWIRES; HOLE TRANSPORTS; NANOWIRE FET; NON EQUILIBRIUM GREEN'S FUNCTION METHOD; NON-EQUILIBRIUM GREEN'S FUNCTION; P-TYPE; SI NANOWIRE; SILICON SIMULATION; SIMULATION RESULT; TIGHT BINDING; TIGHT-BINDING APPROXIMATIONS;

DRAIN CURRENT; GERMANIUM; GREEN'S FUNCTION; MESFET DEVICES; SEMICONDUCTOR DEVICES; SILICON;

NANOWIRES;

EID: 74349110536     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2009.5290200     Document Type: Conference Paper

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