Crystalline orientation effects on ballistic hole current in ultrathin DG SOI MOSFETs

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 229-232

  Minari, H ^a   Mori, N ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; CRYSTALLINE MATERIALS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

CRYSTALLINE ORIENTATIONS; CURRENT FLOWS; DOUBLE GATE SILICON; HOLE CURRENT; HOLE TRANSPORTS; NON EQUILIBRIUM GREEN'S FUNCTION METHOD; STRONG CONFINEMENT; TIGHT-BINDING APPROXIMATIONS;

MOSFET DEVICES;

EID: 84901358078     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_54     Document Type: Conference Paper

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