Effects of Zn doped mesa sidewall on gain enhanced InGaAs/InP heterobipolar phototransistor

IEEE Journal of Quantum Electronics

Volumn 46, Issue 2, 2010, Pages 214-219

  Ogura, Mutsuo ^a   Choi, Sung Woo ^a   Furue, Shigenori ^a   Hayama, Nobuyuki ^a   Nishida, Katsuhiko ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

HPT; InGaAs; Photodetector; Phototransistor; Zn diffusion

Indexed keywords

BASE-COLLECTOR JUNCTIONS; COMMON EMITTER; CURRENT BLOCKING; CURRENT GAINS; DETECTABILITY; EMITTER-BASE JUNCTIONS; HPT; INGAAS; INGAAS PHOTODETECTORS; INGAAS/INP; MESA SIDEWALL; MESA STRUCTURE; OPTICAL POWER; ORDERS OF MAGNITUDE; REVERSE LEAKAGE CURRENT;

CONVERSION EFFICIENCY; HETEROJUNCTION BIPOLAR TRANSISTORS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING INDIUM; TORSIONAL STRESS; ZINC;

PHOTOTRANSISTORS;

EID: 73949132983     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2031121     Document Type: Article

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