SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 12, 2009, Pages

Effect of Fe-doping concentration on microstructure, electrical, and magnetic properties of Pb(Zr0.5Ti0.5)O3 thin films prepared by chemical solution deposition

(9) Bai, W a Meng, X J a Lin, T a Tian, L a Jing, C B a,b Liu, W J c Ma, J H a Sun, J L a Chu, J H a,c

a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

b QINGDAO UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

c EAST CHINA NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOUND MAGNETIC POLARONS; CHEMICAL SOLUTION DEPOSITION; COERCIVE FIELD; DOPING CONCENTRATION; EXCHANGE BIAS; FE DOPING; FE-DOPED; FERROELECTRIC HYSTERESIS LOOP; LATTICE DISTORTIONS; LEAKAGE MECHANISM; MAGNETIC EXCHANGE INTERACTIONS; PZT; PZT THIN FILM; SILICON SUBSTRATES; SPACE CHARGE LIMITED CONDUCTION;

CHEMICALS; DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; LEAD; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MICROSTRUCTURE; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; POLARONS; SEMICONDUCTING LEAD COMPOUNDS; SURFACE ROUGHNESS; THIN FILMS; ZIRCONIUM;

MAGNETIC LEAKAGE;

EID: 73849135542 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3273384 Document Type: Article

Times cited : (30)

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