Nanoscale contacts between carbon nanotubes and metallic pads

ACS Nano

Volumn 3, Issue 12, 2009, Pages 4117-4121

  Peng, Ning ^a   Li, Hong ^a   Zhang, Qing ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Carbon nanotube; Nanoscale contacts; Passivation; Schottky barrier

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; DEVICE FABRICATIONS; DIPOLE POLARIZATION; ELECTRICAL PROPERTY; ELECTROSTATIC CHARGES; ENERGY-BAND BENDING; METAL ELECTRODES; METALLIC PADS; NANO CONTACTS; NANO SCALE; NANOSCALE CONTACTS; SCHOTTKY; SCHOTTKY BARRIER; SCHOTTKY BARRIERS; SOURCE AND DRAINS; THIN LAYERS;

ADSORPTION; ELECTRIC PROPERTIES; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; NANOSTRUCTURED MATERIALS; OXYGEN; PASSIVATION; SCHOTTKY BARRIER DIODES;

CARBON NANOTUBES;

CARBON NANOTUBE; METAL;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MICROELECTRODE; NANOTECHNOLOGY; SEMICONDUCTOR; THEORETICAL MODEL; ULTRASTRUCTURE;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; METALS; MICROELECTRODES; MODELS, THEORETICAL; NANOTECHNOLOGY; NANOTUBES, CARBON; TRANSISTORS, ELECTRONIC;

EID: 73849135271     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn9012516     Document Type: Article

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