Potentiality of metal-oxide-semiconductor silicon optical modulator based on free carrier absorption

Japanese Journal of Applied Physics

Volumn 48, Issue 11, 2009, Pages

  Tabei, Tetsuo ^a   Hirata, Tomoki ^b   Kajikawa, Kenta ^c   Sunami, Hideo ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b NIKON CORPORATION   (Japan)

^c OMRON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXTINCTION RATIOS; FREE CARRIER ABSORPTION; FREE CARRIERS; GATE VOLTAGES; GUIDED WAVE; INVERSION LAYER; METAL OXIDE SEMICONDUCTOR; OPTICAL MODULATORS; PRACTICAL USE; PROPAGATION LOSS; SILICON ON INSULATOR WAFERS; SURFACE PLASMONS; THEORETICAL RESULT; WAVELENGTH DEPENDENCE; WEAK INTERACTIONS;

ABSORPTION; DIELECTRIC DEVICES; LIGHT EXTINCTION; LIGHT MODULATION; LIGHT PROPAGATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

LIGHT MODULATORS;

EID: 73849121851     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.114501     Document Type: Article

References (23)

1. G. V. Treyz, Paul G. May, and J.-M. Halbout: IEEE Electron Device Lett. 12 (1991) 276.
2. A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Panicca: Nature 427 (2004) 615.
3. L. Liao, D. Samara-Rubio, A. Liu, D. Rubin, U. D. Keil, T. Franck, D. Hodge, and M. Panicca: Jpn. J. Appl. Phys. 45 (2006) 6603.
4. L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia: Electron. Lett. 43 (2007) 1196.
5. A. Sciuto, S. Libertino, S. Coffa, and G. Coppola: Appl. Phys. Lett. 86 (2005) 201115.
6. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson: Nature 435 (2005) 325.
7. T. Furukawa and H. Sunami: Ext. Abstr. (61st Autumn Meet., 2000);
8. Japan Society of Applied Physics and Related Societies, 6p-ZK-1, p. 94 [in Japanese].
9. T. Hirata, K. Kajikawa, T. Tabei, and H. Sunami: Jpn. J. Appl. Phys. 47 (2008) 2906.
10. T. Tabei, T. Hirata, K. Kajikawa, and H. Sunami: IEDM Tech. Dig., 2007, p. 1023.
11. W. Spitzer and H. Y. Fan: Phys. Rev. 108 (1957) 268.
12. P. E. Schmid: Phys. Rev. B 23 (1981) 5531.
13. R. A. Soref and J. P. Lorenzo: IEEE J. Quantum Electron. 22 (1986) 873.
14. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed., p. 29.
15. E. Barta: Infrared Phys. 17 (1977) 111.
16. Y. Taur and T. H. Ning: Fundamentals of Modern VLSI Devices (Cambridge University Press, New York, 1998) p. 133.
17. J. Homola: in Surface Plasmon Resonance Based Sensors, ed. J. Homola (Springer, Berlin, 2006) p. 3.
18. E. A. J. Marcatili: Bell Syst. Tech. J. 48 (1969) 2071.
19. H. R. Philipp: in Handbook of Optical Constants of Solids, ed. E. D. Palik (Academic Press, New York, 1985) p. 749.
20. J. Xiaoqing, Y. Jianyi, and W. Mingghua: Opt. Commun. 129 (1996) 173.
21. S. X. She: Opt. Commun. 135 (1997) 241.
22. J. Homola, J. Čtyroký, M. Skalský, J. Hradilová, and P. Kolářová: Sens. Actuators B 39 (1997) 286.
23. J. A. Dionne, L. A. Sweatlock, and H. A. Atwater: Phys. Rev. B 72 (2005) 075405.