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Journal of Applied Physics

Volumn 106, Issue 12, 2009, Pages

Synthetic antiferromagnet with Heusler alloy Co2 FeAl ferromagnetic layers

(6) Xu, X G a Zhang, D L a Li, X Q a Bao, J a Jiang, Y a Jalil, M B A b

a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETICS; B2 PHASE; FERROMAGNETIC LAYERS; HEUSLER; HEUSLER ALLOYS; MAGNETIC MEMORY DEVICES; MAGNETIC READ HEAD; MAGNETIC SWITCHING; MAGNETIC TUNNELING JUNCTIONS; ROOM TEMPERATURE; SATURATION FIELDS; SPIN VALVE; SWITCHING FIELD; SYNTHETIC ANTIFERROMAGNET STRUCTURES; SYNTHETIC ANTIFERROMAGNETIC; SYNTHETIC ANTIFERROMAGNETS; ULTRAHIGH DENSITY;

ALLOYS; ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; COBALT; ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; IRON COMPOUNDS; MAGNETIC FIELD EFFECTS; MAGNETIC HEADS; MAGNETIC STORAGE; MAGNETORESISTANCE; SATURATION MAGNETIZATION;

CRYSTAL STRUCTURE;

EID: 73849083341 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3271352 Document Type: Article

Times cited : (14)

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