Contribution to carrier densities of the oxygen vacancy in a low-resistivity tin-doped indium oxide film by the hot-cathode plasma sputtering method

Materials Letters

Volumn 64, Issue 5, 2010, Pages 622-624

  Kono, Akihiko ^a,b   Nagai, Tatsuzo ^a   Shoji, Fumiya ^a  

^a KYUSHU KYORITSU UNIVERSITY   (Japan)

^b KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Indium tin Oxide (ITO) film; Sputtering; Thin film; Transparent conducting oxide (TCO) film

Indexed keywords

ANNEALING CYCLES; CARRIER DENSITY; CATHODE PLASMAS; ELECTRICAL PROPERTY; GLASS SUBSTRATES; INDIUM TIN OXIDE (ITO) FILM; INDIUM TIN OXIDE FILMS; ITO FILMS; OXYGEN GAS; TIN DOPED INDIUM OXIDE; TRANSPARENT CONDUCTING OXIDE FILMS;

ATMOSPHERIC PRESSURE; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; INDIUM; INDIUM COMPOUNDS; ITO GLASS; OXIDE FILMS; OXYGEN; PHOTOLITHOGRAPHY; THIN FILM DEVICES; THIN FILMS; TIN; TITANIUM COMPOUNDS; VACANCIES;

OXYGEN VACANCIES;

EID: 73649107792     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.12.022     Document Type: Article

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