Depth distribution of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2375-2378

  Kitamura, T ^a   Nakashima, S ^a   Mitani, T ^a   Nakamura, N ^a,c   Furuta, K ^b   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b R&D Association for Future Electron Devices   (Japan)

^c NIHON UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAINS; DEEP ULTRA VIOLET; DEPTH DISTRIBUTIONS; GAN LAYERS; GENERATION RATE; GROWTH DIRECTIONS; HETEROSTRUCTURES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; MICRO-RAMAN; MICRO-RAMAN SPECTROSCOPY; MISFIT DISLOCATIONS; MOLECULAR BEAM EPITAXY (MBE); NITRIDE SEMICONDUCTORS; RAMAN SHIFTING; RAMAN SIGNALS; RELAXATION MODELLING; RELAXATION RATES;

ARCHITECTURAL ACOUSTICS; CHEMICAL BEAM EPITAXY; CRYSTAL GROWTH; CRYSTALS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; STRAIN CONTROL; STRAIN RELAXATION;

HETEROJUNCTIONS;

EID: 49749134722     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674801     Document Type: Conference Paper

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