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Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

Volumn 107, Issue 5, 2009, Pages 780-783

Accuracy of ellipsometric monitoring during growth of semiconductor nanostructures

(1) Shvets, V A a,b

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

b NOVOSIBIRSK STATE UNIVERSITY (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE OF INCIDENCE; COMPLEX REFLECTION COEFFICIENT; HIGH REFRACTIVE INDEX; IN-SITU; MULTILAYER STRUCTURES; QUALITATIVE CRITERIA; SEMICONDUCTOR NANOSTRUCTURES; TERNARY COMPOUNDS;

CADMIUM; CADMIUM COMPOUNDS; MERCURY (METAL); MULTILAYERS; OPTICAL CONSTANTS; OPTICAL MULTILAYERS; REFRACTIVE INDEX; SEMICONDUCTOR GROWTH; TELLURIUM;

ELLIPSOMETRY;

EID: 73349091195 PISSN: 0030400X EISSN: 15626911 Source Type: Journal
DOI: 10.1134/S0030400X09110150 Document Type: Article

Times cited : (5)

References (11)

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2
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3
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4
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6
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7
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8
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10
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11
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.