Effects of nitrogen doping and working pressure on the crystallization of GeiSb4Te7 thin films for PRAM applications

Journal of the Korean Physical Society

Volumn 55, Issue 5 PART 1, 2009, Pages 1896-1900

  Kim, Hyung Keun ^a   Lee, Seung Yun ^a   Choi, Doo Jin ^a   Shin, Sangwoo ^a   Cho, Hyung Hee ^a   Roh, Jae Sung ^b  

^a Yonsei University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

GST; Nitrogen doping; PRAM; Working pressure

Indexed keywords

EID: 73249114217     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.55.1896     Document Type: Article

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