Dark electrical and photovoltaic properties of Schottky device based on organic thin film of 4-tricyanovinyl-N, N-diethylaniline

EPJ Applied Physics

Volumn 48, Issue 3, 2009, Pages

  El Nahass, M M ^a   Abd El Rahman, K F ^a   Darwish, A A A ^a  

^a Ain Shams University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

AL ELECTRODE; EXPONENTIAL TRAP DISTRIBUTION; FORWARD BIAS; INDIUM TIN OXIDE; INPUT POWER; LIGHT ILLUMINATION; ORGANIC THIN FILMS; PHOTOVOLTAIC CHARACTERISTICS; PHOTOVOLTAIC PARAMETERS; PHOTOVOLTAIC PROPERTY; POOLE-FRENKEL EFFECT; REVERSE BIAS; ROOM TEMPERATURE; SCHOTTKY DEVICES; SPACE-CHARGE-LIMITED;

ELECTRIC PROPERTIES; OXIDE FILMS; THERMIONIC EMISSION; THIN FILMS; TIN; TITANIUM COMPOUNDS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 73149113295     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap/2009175     Document Type: Article

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