Guard-ring structures for silicon photomultipliers

IEEE Electron Device Letters

Volumn 31, Issue 1, 2010, Pages 41-43

  Sul, Woo Suk ^a,b   Oh, Jung Hun ^a   Lee, Chae Hun ^c   Cho, Gyu Seong ^c   Lee, Wan Gyu ^b   Kim, Sam Dong ^a   Rhee, Jin Koo ^a  

^a Dongguk University   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Breakdown; Fill factor; Full width at half maximum (FWHM); Gamma spectrum; Guard ring structure; Si photomultiplier (SiPM)

Indexed keywords

COMPARATIVE STUDIES; DEVICE PERFORMANCE; FILL FACTOR; GAMMA SPECTRUM; GUARD-RINGS; HIGH BREAKDOWN VOLTAGE; HIGH RESOLUTION; LOW ENERGIES; N-IMPLANTATION; SILICON PHOTOMULTIPLIER;

ELECTRON ENERGY LEVELS; GAMMA RAY SPECTROMETERS; HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTOMULTIPLIERS; SILICON;

FULL WIDTH AT HALF MAXIMUM;

EID: 72949110365     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2035829     Document Type: Article

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