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Volumn 114, Issue 5, 2008, Pages 1417-1420
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Non-exponential photoionization of the DX centers in gallium doped CdTe and Cd0.99Mn0.01Te
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CADMIUM ALLOYS;
CADMIUM TELLURIDE;
COLOR CENTERS;
GALLIUM ALLOYS;
PHOTOCONDUCTIVITY;
SEMICONDUCTOR GROWTH;
TEMPERATURE;
DX CENTERS;
EXPONENTIAL MODELS;
LOW TEMPERATURES;
PERSISTENT PHOTOCONDUCTIVITY;
PHOTOKINETICS;
POWER-LAW;
STRETCHED EXPONENTIAL;
MANGANESE;
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EID: 54949097808
PISSN: 05874246
EISSN: None
Source Type: Journal
DOI: 10.12693/APhysPolA.114.1417 Document Type: Conference Paper |
Times cited : (4)
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References (14)
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