Local vibrational excitation through extended electronic states at a germanium surface

Physical Review Letters

Volumn 103, Issue 26, 2009, Pages

  Tomatsu, Kota ^a   Nakatsuji, Kan ^a   Yamada, Masamichi ^a   Komori, Fumio ^a   Yan, Binghai ^b   Yam, Chiyung ^b   Frauenheim, Thomas ^b   Xu, Yong ^c   Duan, Wenhui ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF BREMEN   (Germany)

^c TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC MOTION; EXCITED ELECTRONIC STATE; EXTENDED SURFACES; GERMANIUM SURFACE; LOCAL VIBRATIONAL MODE; SINGLE ELECTRON; STRONG COUPLING; SURFACE STATE; SURFACE-STATE ELECTRONS; THEORETICAL INVESTIGATIONS; VIBRATIONAL EXCITATION;

CHEMICAL BONDS; ELECTRONIC STATES; GERMANIUM; SCANNING TUNNELING MICROSCOPY;

DENSITY FUNCTIONAL THEORY;

EID: 72649089018     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.103.266102     Document Type: Article

References (23)

1. B.C. Stipe, Phys. Rev. Lett. 78, 4410 (1997). PRLTAO 0031-9007 10.1103/PhysRevLett.78.4410
2. B.C. Stipe, M.A. Rezaei, and W. Ho, Science 279, 1907 (1998). SCIEAS 0036-8075 10.1126/science.279.5358.1907
3. T. Komeda, Science 295, 2055 (2002). SCIEAS 0036-8075 10.1126/science.1069016
4. Y. Takagi, Y. Yoshimoto, K. Nakatsuji, and F. Komori, Surf. Sci. 559, 1 (2004). SUSCAS 0039-6028 10.1016/j.susc.2004.04.010
5. Y. Takagi, K. Nakatsuji, Y. Yoshimoto, and F. Komori, Phys. Rev. B PRBMDO 1098-0121 75, 115304 (2007). 10.1103/PhysRevB.75.115304
6. P. Maksymovych, D.B. Dougherty, X.Y. Zhu, and J.T. Yates, Phys. Rev. Lett. 99, 016101 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.99.016101
7. H. Gawronski, J. Carrasco, A. Michaelides, and K. Morgenstern, Phys. Rev. Lett. 101, 136102 (2008). PRLTAO 0031-9007 10.1103/PhysRevLett.101.136102
8. H. Kawai and O. Narikiyo, J. Phys. Soc. Jpn. 73, 2362 (2004). JUPSAU 0031-9015 10.1143/JPSJ.73.2362
9. A. Cavalleri, Phys. Rev. Lett. 87, 237401 (2001). PRLTAO 0031-9007 10.1103/PhysRevLett.87.237401
10. P. Baum, D.-S. Yang, and A.H. Zewail, Science 318, 788 (2007). SCIEAS 0036-8075 10.1126/science.1147724
11. L. Bartels, Science 305, 648 (2004). SCIEAS 0036-8075 10.1126/science.1099770
12. E.H.G. Backus, A. Eichler, A.W. Kleyn, and M. Bonn, Science 310, 1790 (2005). SCIEAS 0036-8075 10.1126/science.1120693
13. M. Needels, M.C. Payne, and J.D. Joannopoulos, Phys. Rev. B PRBMDO 0163-1829 38, 5543 (1988). 10.1103/PhysRevB.38.5543
14. J.P. Perdew and Y. Wang, Phys. Rev. B PRBMDO 0163-1829 45, 13244 (1992). 10.1103/PhysRevB.45.13244
15. G. Kresse and J. Hafner, Phys. Rev. B PRBMDO 0163-1829 47, 558 (1993); 10.1103/PhysRevB.47.558
16. G. Kresse and J. Furthmuller, Phys. Rev. B PRBMDO 0163-1829 54, 11169 (1996). 10.1103/PhysRevB.54.11169
17. D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 41, 7892 (1990). 10.1103/PhysRevB.41.7892
18. W.G. Schmidt, F. Bechstedt, and G.P. Srivastava, Phys. Rev. B PRBMDO 0163-1829 52, 2001 (1995). 10.1103/PhysRevB.52.2001
19. B. Yan, Phys. Rev. B PRBMDO 1098-0121 79, 235437 (2009). 10.1103/PhysRevB.79.235437
20. K. Nakatsuji, Y. Takagi, F. Komori, H. Kusuhara, and A. Ishii, Phys. Rev. B PRBMDO 1098-0121 72, 241308(R) (2005). 10.1103/PhysRevB.72.241308
21. H.M. Tütüncü, S.J. Jenkins, and G.P. Srivastava, Phys. Rev. B PRBMDO 0163-1829 57, 4649 (1998). 10.1103/PhysRevB.57.4649
22. P.Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties (Springer-Verlag, Berlin, 2001), 3rded..
23. K. Tomatsu, Science 315, 1696 (2007). SCIEAS 0036-8075 10.1126/science.1137848