Fabrication of semiconducting SrB6-δ thin films on ultrasmooth sapphire substrates by laser molecular beam epitaxy

Journal of Crystal Growth

Volumn 312, Issue 3, 2010, Pages 378-381

  Kato, Y ^a   Shiraishi, N ^a   Tsuchimine, N ^b   Kobayashi, S ^b   Yoshimoto, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b Toshima MFG Co Ltd   (Japan)

Author keywords

A1. Crystal structure; A1. Growth models; A1. Reflection high energy electron diffraction; A3. Laser epitaxy; B1. Inorganic compounds; B2. Semiconducting materials

Indexed keywords

A1. GROWTH MODELS; A3. LASER EPITAXY; B2. SEMICONDUCTING MATERIALS; GROWTH MODELS; LASER EPITAXY; SEMICONDUCTING MATERIALS;

CORUNDUM; ELECTRON DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; HIGH ENERGY PHYSICS; INORGANIC COMPOUNDS; LASERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; REFLECTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SINGLE CRYSTALS; SOIL CONSERVATION; SUBSTRATES; SULFUR COMPOUNDS;

CRYSTAL STRUCTURE;

EID: 72549113831     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.015     Document Type: Article

References (21)

1. Takeda M., Fukuda T., Domingo F., and Miura T. J. Solid State Chem. 177 (2004) 471
2. Chen C.-H., Aizawa T., Iyi N., Sato A., and Otani S. J. Alloys Compd. 366 (2004) L6
3. Sobczak R.J., and Sienko M.J. J. Less-Common Met. 67 (1979) 167
4. Young D.P., Hall D., Torelli M.E., Fisk Z., Sarrao J.L., Thompson J.D., Ott H.-R., Oseroff S.B., Goodrich R.G., and Zysler R. Nature 397 (1999) 412
5. Johnson R.W., and Daane A.H. J. Chem. Phys. 38 (1963) 425
6. Ott H.R., Chernikov M., Felder E., Degiorgi L., Moshopoulou E.G., Sarrao J.L., and Fisk Z. Z. Phys. B 102 (1997) 337
7. Denlinger J.D., Clack J.A., Allen J.W., Gweon G.-H., Poirier D.M., Olson C.G., Sarrao J.L., Bianchi A.D., and Fisk Z. Phys. Rev. Lett. 89 (2002) 157601
8. Rodriguez C.O., Weht R., and Pickett W.E. Phys. Rev. Lett. 84 (2000) 3903
9. Takeda M., Terui M., Takahashi N., and Ueda N. J. Solid State Chem. 179 (2006) 2823
10. Cho B.K., Rhyee J.-S., Oh B.H., Jung M.H., Kim H.C., Yoon Y.K., Kim J.H., and Ekino T. Phys. Rev. B 69 (2004) 113202
11. Jash P., Nicholls A.W., Ruoff R.S., and Trenary M. Nano Lett. 8 (2008) 3794
12. Dorneles L.S., Venkatesan M., Moliner M., Lunney J.G., and Coey J.M.D. Appl. Phys. Lett. 85 (2004) 6377
13. Tashiro J., Sasaki A., Akiba S., Satoh S., Watanabe T., Funakubo H., and Yoshimoto M. Thin Solid Films 415 (2002) 272
14. Maeda T., Yoshimoto M., Ohnishi T., Lee G.H., and Koinuma H. J. Cryst. Growth 177 (1997) 95
15. Sasaki A., Hara W., Matsuda A., Tateda N., Otaka S., Akiba S., Saito K., Yodo T., and Yoshimoto M. Appl. Phys. Lett. 86 (2005) 231911
16. Hara W., Liu J., Sasaki A., Otaka S., Tateda N., Saito K., and Yoshimoto M. Thin Solid Films 516 (2008) 2889
17. Sasaki A., Liu J., Hara W., Akiba S., Saito K., Yodo T., and Yoshimoto M. J. Mater. Res. 19 (2004) 2725
18. Yoshimoto M., Yoshida K., Maruta H., Hishitani Y., Koinuma H., Nishio S., Kakihana M., and Tachibana T. Nature 399 (1999) 340
19. Yoshimoto M., Maeda T., Ohnishi T., Ishiyama O., Shinohara M., Kubo M., Miura R., Miyamoto A., and Koinuma H. Appl. Phys. Lett. 67 (1995) 2615
20. Kato Y., Ono Y., Akita Y., Hosaka M., Shiraishi N., Tsuchimine N., Kobayashi S., and Yoshimoto M. Mat. Res. Soc. Symp. Proc. 1148 (2009) PP12-02
21. Lee B., and Wang L.-W. Appl. Phys. Lett. 87 (2005) 262509