Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2009, Pages

  Suijker, E M ^a   Rodenburg, M ^a   Hoogland, J A ^a   Van Heijningen, M ^a   Seelmann Eggebert, M ^b   Quay, R ^b   Bruckner P ^b   Van Vliet, F E ^a  

^a TNO   (Netherlands)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; HIGH POWER CAPABILITY; KA BAND; KU-BAND; LOW NOISE PERFORMANCE; MEASURED RESULTS; MICROSTRIP TECHNOLOGY; POWER LEVELS;

AUDIO FREQUENCY AMPLIFIERS; FREQUENCY BANDS; GALLIUM ALLOYS; GALLIUM NITRIDE; LOW NOISE AMPLIFIERS; MICROWAVE CIRCUITS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SPACE APPLICATIONS;

INTEGRATED CIRCUITS;

EID: 72549104152     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/csics.2009.5315640     Document Type: Conference Paper

References (7)

1. th GAAS Symposium - Amsterdam, 2004.
2. S. Cha, et. al, "Wideband AlGaN/GaN HEMT Low Noise Amplifier For Highly Survivable Receiver Electronics", IEEE MTT-S Digest 2004.
3. th GAAS Symposium - Paris, 2005.
4. M. Rudolph, et al., "Analysis of the survivability of GaN Low-noise Amplifiers", IEEE Trans on Microwaves Theory and Techniques, vol. 55, January 2007.
5. M. Micovic, et al., "Robust Broadband (4-16GHz) GaN MMIC LNA", CSICS 2007.
6. J.P.B. Janssen, et al., "X-band AlGaN/GaN MMICs with over 41 dBm Power Handling", CSICS 2008.
7. M. Rudolph, et al., "Highly Rugged 30 GHz GaN Low-Noise Amplifiers", IEEE Microw. Wireless Compon. Lett., vol. 19, no. 4, Apr. 2009.