Gallium antisite defect and residual acceptors in undoped GaSb

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 332, Issue 3-4, 2004, Pages 286-290

  Hu, W G ^a   Wang, Z ^a   Su, B F ^a   Dai, Y Q ^a   Wang, S J ^a   Zhao, Y W ^b  

^a WUHAN UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Coincidence Doppler broadening; Defect; GaSb; Positron annihilation

Indexed keywords

BINARY ALLOYS; DEFECTS; DOPPLER EFFECT; ELECTRONS; GALLIUM; GALLIUM COMPOUNDS; III-V SEMICONDUCTORS; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS;

ANTI-SITE DEFECT; CHARGE STATE; COINCIDENCE DOPPLER BROADENING; GASB; P-TYPE CONDUCTION; POSITRON LIFETIME SPECTROSCOPY; RESIDUAL ACCEPTORS; RESIDUAL CARRIER DENSITY;

ANTIMONY COMPOUNDS;

ANTIMONY; GALLIUM;

ARTICLE; BINDING SITE; COLOR ULTRASOUND FLOWMETRY; CONDUCTANCE; CORRELATION ANALYSIS; DENSITY GRADIENT; ELECTRICITY; MOLECULAR DYNAMICS; MOLECULAR INTERACTION; MOLECULAR MECHANICS; POSITRON; REACTION ANALYSIS; SAMPLING; SPECTROSCOPY;

EID: 7244245836     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2004.09.056     Document Type: Article

References (24)

1. P.S. Dutta, K.S.R. Koteswara Rao, H.L. Bhat, and V. Kumar Appl. Phys. A, Mater. Sci. Process. 61 1995 149
2. A.G. Milnes, and A.Y. Polyakov Solid State Electron. 36 1993 803
3. M.H. Van Maaren J. Phys. Chem. Solids 27 1966 472
4. M. Lee, D.J. Nicholas, K.E. Singer, and B. Hamilton J. Appl. Phys. 59 1986 2895
5. D. Effer, and P.J. Effer J. Phys. Chem. Solids 25 1964 451
6. C.C. Ling, W.K. Mui, C.H. Lam, and C.D. Beling Appl. Phys. Lett. 80 2002 21
7. M.J. Puska, and R.M. Nieminen Rev. Mod. Phys. 66 1994 841
8. R. Krause-Rehberg, and H.S. Leipner Positron Annihilation in Semiconductors 1999 Springer-Verlag Berlin
9. K. Saarinen, P. Hautojaevi, and C. Corbel M. Stavola Identification of Defects in Semiconductors 1997 Academic Press New York
10. Z. Wang, H.S. Leipner, R. Krause-Rehberg, and V. Bodarenko Microelectronic Engrg. 2003 66
11. Z.Q. Chen, X.W. Hu, S.J. Wang, and S.Q. Li Solid State Commun. 97 1996 11
12. Z.Q. Chen, Z. Wang, and S.J. Wang Chin. Phys. Lett. 16 8 1999 586
13. K.G. Lynn, J.R. Macdonald, R.A. Boie, and L.C. Feldman Phys. Rev. Lett. 38 1977 241
14. C.C. Ling, S. Fung, and C.D. Beling Phys. Rev. B 64 2001 75201
15. K.G. Lynn, J.E. Dickman, W.L. Brown, M.F. Robbins, and E. Bonerup Phys. Rev. B 20 1979 3566
16. A.A. Rempel, W. Sprengel, K. Blaurock, and K.J. Reichle Phys. Rev. Lett. 89 2002 185501
17. M.J. Puska, S. Maekinen, and M. Manninen Phys. Rev. B 39 1989 7666
18. Z.Q. Chen, X.W. Hu, and S.J. Wang Appl. Phys. A, Matter. Sci. Process. 66 1998 435
19. H. Xu J. Appl. Phys. 68 1990 4077
20. M. Hakala, M.J. Puska, and R.M. Nieminen J. Appl. Phys. 91 2002 4988
21. Ph. Ebert, P. Quadbeck, and K. Urban Appl. Phys. Lett. 79 2001 18
22. R.C. Newman, B.R. Davidson, and R. Addinall Mater. Sci. Forum 143-147 1994 229
23. M. Palczewska, J. Jasinski, and K. Korona J. Appl. Phys. 78 1995 3680
24. M. Palczewska, J. Jasinski, and M. Kaminska Acta Phys. Pol. A 87 1995 461