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Volumn 66, Issue 4, 1998, Pages 435-440
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Vacancies and impurities in InP studied using positron lifetime and an improved Doppler-broadening spectrometer
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CRYSTAL DEFECTS;
CRYSTAL IMPURITIES;
DOPPLER EFFECT;
IRON;
SEMICONDUCTOR DOPING;
SPECTROMETERS;
CHARGE TRAPPING CENTERS;
DOPPLER BROADENING SPECTROMETRY;
POSITRON LIFETIME SPECTROMETRY;
SEMICONDUCTING INDIUM PHOSPHIDE;
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EID: 0032045917
PISSN: 09478396
EISSN: None
Source Type: Journal
DOI: 10.1007/s003390050690 Document Type: Article |
Times cited : (17)
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References (25)
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