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Volumn 66, Issue 4, 1998, Pages 435-440

Vacancies and impurities in InP studied using positron lifetime and an improved Doppler-broadening spectrometer

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DOPPLER EFFECT; IRON; SEMICONDUCTOR DOPING; SPECTROMETERS;

EID: 0032045917     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050690     Document Type: Article
Times cited : (17)

References (25)
  • 14
    • 0004285535 scopus 로고
    • Risø National Laboratory Roskide Denmark
    • PATFIT package, Risø National Laboratory Roskide Denmark 1989
    • (1989) PATFIT Package
  • 22


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.