Gate field induced electronic current modulation in a single wall boron nitride nanotube: Molecular scale field effect transistor

Chemical Physics Letters

Volumn 482, Issue 4-6, 2009, Pages 312-315

  Pati, Ranjit ^a   Panigrahi, Puspamitra ^a   Pal, Partha Pratim ^a   Akdim, Brahim ^b   Pachter, Ruth ^b  

^a MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE NANOTUBES; CHANNEL CURRENTS; ELECTRONIC CURRENT; FIRST-PRINCIPLES; GATE FIELD; GOLD ELECTRODES; MANY BODY; MOLECULAR SCALE; NON-EQUILIBRIUM GREEN'S FUNCTION; OFF CURRENT; QUANTUM TRANSPORT; SINGLE WALL; SOURCE AND DRAINS; STARK SHIFT;

BORON; BORON NITRIDE; DIFFERENTIAL EQUATIONS; DRAIN CURRENT; ELECTRIC FIELD EFFECTS; GREEN'S FUNCTION; NANOTUBES; NITRIDES; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS;

FIELD EFFECT TRANSISTORS;

EID: 72249096672     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2009.10.027     Document Type: Article

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