A cross-linked poly(methyl methacrylate) gate dielectric by ion-beam irradiation for organic thin-film transistors

Organic Electronics

Volumn 10, Issue 8, 2009, Pages 1596-1600

  Yun, Youngjun ^a   Pearson, Christopher ^a   Cadd, Duncan H ^a   Thompson, Richard L ^a   Petty, Michael C ^a  

^a DURHAM UNIVERSITY   (United Kingdom)

Author keywords

Ion beam irradiation; Organic thin film transistor; Polymer gate dielectrics

Indexed keywords

CHEMICAL SENSORS; DIELECTRIC MATERIALS; ESTERS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; ION BEAMS; ION BOMBARDMENT; IONS; LEAKAGE CURRENTS; PHOTOTRANSISTORS; POLYMETHYL METHACRYLATES; POWER TRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THRESHOLD VOLTAGE; ULTRATHIN FILMS;

CROSS-LINKED POLY(METHYL METHACRYLATE); ELECTRICAL CHARACTERISTIC; ION BEAM IRRADIATION; LOW-LEAKAGE CURRENT; ON/OFF CURRENT RATIO; ORGANIC THIN FILM TRANSISTOR (OTFTS); ORGANIC THIN FILM TRANSISTORS; POLYMER GATE DIELECTRICS;

THIN FILM TRANSISTORS;

EID: 71849083172     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.09.007     Document Type: Article

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