Characterization of gadolinium oxide film by pulse laser deposition

Applied Surface Science

Volumn 256, Issue 3, 2009, Pages 921-923

  Cheng, Xinhong ^a   Xu, Dapeng ^a   Song, Zhaorui ^a   He, Dawei ^a   Yu, Yuehui ^a   Zhao, Qingtai ^b   Shen, DaShen ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

Gd oxide; High k gate dielectrics; PLD

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; GATE DIELECTRICS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HIGH-K DIELECTRIC; OXIDE FILMS; PULSED LASER DEPOSITION; SILICIDES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL MEASUREMENT; FULLY SILICIDE GATES; GADOLINIUM OXIDE FILMS; HIGH- K GATE DIELECTRICS; OXIDE DIELECTRIC; POLYCRYSTALLINE; PULSE LASER DEPOSITION; PULSE LASER DEPOSITION (PLD) METHOD;

GADOLINIUM COMPOUNDS;

EID: 71749121187     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.08.086     Document Type: Article

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